W29N01HV
(1736 kB)
(1661 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 8 bits
- 1- or 4-bit ECC
- block organization, total 1024 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 25 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA
- operating temperature range: industrial (I), automotive (A)
- compliance with AEC-Q100 automotive specification
|
1 Gbit (128Mx8) |
40 MHz |
25 |
2.7 – 3.6 |
-40 – +85 (I)
Automotive: -40 – +105 (A) -40 – +115 |
TSOP-48 VFBGA-48 8x6.5 mm |
P |
P |
W29N01HZ
(2242 kB)
(1913 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 8 bits
- 1-bit ECC
- block organization, total 1024 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 25 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance: 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA
- operating temperature range: industrial (I), automotive (A)
- compliance with AEC-Q100 automotive specification
|
1 Gbit (128Mx8) |
40 MHz |
25 |
1.7 – 1.95 |
-40 – +85 (I)
Automotive: -40 – +105 (A) -40 – +115 |
TSOP-48 VFBGA-48 8x6.5 mm VBGA-63 9x11 mm |
S |
P |
W29N01HW
(2242 kB)
(1913 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 16 bits
- 1-bit ECC
- block organization, total 1024 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 25 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance: 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA
- temperature range: industrial (I), automotive (B, A)
- compliance with AEC-Q100 automotive specification
|
1 Gbit (64Mx16) |
40 MHz |
25 |
1.7 – 1.95 |
-40 – +85 (I)
Automotive: -40 – +85 (B) -40 – +105 (A) |
VFBGA-48 8x6.5 mm VBGA-63 9x11 mm |
- |
P |
W29N02KV
(2098 kB)
(2072 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 8 bits
- 4-bit ECC
- block organization, total 2048 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 25 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA
- operating temperature range: industrial (I), industrial plus (J)
|
2 Gbit (256Mx8) |
40 MHz |
25 |
2.7 – 3.6 |
-40 – +85 (I) -40 – +105 (J) |
VFBGA-48 8x6,5 mm VFBGA-63 9x11 mm TSOP-48 |
- |
P |
W29N02KZ
(2158 kB)
(2055 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 8 bits
- 1-bit ECC
- block organization, total 2048 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 25 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance: 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA
- operating temperature range: industrial (I), industrial plus (J)
|
2 Gbit (256Mx8) |
40 MHz |
25 |
1.7 – 1.95 |
-40 – +85 (I) -40 – +105 (J) |
VFBGA-48 8x6,5 mm VFBGA-63 9x11 mm TSOP-48 |
- |
P |
W29N02GV
(2369 kB)
(2313 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 8 bits
- 1- or 4-bit ECC
- block organization, total 2048 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 25 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA
- operating temperature range: industrial (I), automotive (A)
- compliance with AEC-Q100 automotive specification
|
2 Gbit (256Mx8) |
40 MHz |
25 |
2.7 – 3.6 |
-40 – +85 (I)
Automotive: -40 – +105 (A) -40 – +115 |
TSOP-48 VFBGA-63 9x11 mm |
P |
P |
W29N02GZ
(2055 kB)
(2009 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 8 bits
- 1- or 4-bit ECC
- block organization, total 2048 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 25 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance: 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA
- operating temperature range: industrial (I), automotive (A)
- compliance with AEC-Q100 automotive specification
|
2 Gbit (256Mx8) |
29 MHz |
25 |
1.7 – 1.95 |
-40 – +85 (I)
Automotive: -40 – +105 (A) -40 – +115 |
TSOP-48 VFBGA-63 9x11 mm |
S |
P |
W29N02GW
(2055 kB)
(2009 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 16 bits
- 1- or 4-bit ECC
- block organization, total 2048 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 25 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance: 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA
- operating temperature range: industrial (I), industrial plus (J)
|
2 Gbit (128Mx16) |
29 MHz |
25 |
1.7 – 1.95 |
-40 – +85 (I) -40 – +105 (J) |
VFBGA-63 9x11 mm |
- |
P |
W29N04KZ
(2164 kB)
(1713 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 8 bits
- block organization, total 4096 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance: 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA for industrial or 20 µA for industrial plus
- operating temperature range: industrial (I), industrial plus (J)
|
4 Gbit (512Mx8) |
40 MHz |
25 |
1.7 – 1.95 |
-40 – +85 (I) -40 – +105 (J) |
TSOP-48 VFBGA-63 9x11 mm |
- |
P |
W29N04GV
(992 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 8 bits
- 1- or 4-bit ECC
- block organization, total 4096 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 25 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA
- operating temperature range: industrial (I), automotive (A)
- compliance with AEC-Q100 automotive specification
|
4 Gbit (512Mx8) |
40 MHz |
25 |
2.7 – 3.6 |
-40 – +85 (I)
Automotive: -40 – +105 (A) -40 – +115 |
TSOP-48 VFBGA-63 9x11 mm |
P |
P |
W29N04GZ
(1964 kB)
(1853 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 8 bits
- 1- or 4-bit ECC
- block organization, total 4096 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 35 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance: 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA
- operating temperature range: industrial (I), automotive (A)
- compliance with AEC-Q100 automotive specification
|
4 Gbit (512Mx8) |
40 MHz |
25 |
1.7 – 1.95 |
-40 – +85 (I)
Automotive: -40 – +105 (A) -40 – +115 |
TSOP-48 VFBGA-63 9x11 mm |
S |
P |
W29N04GW
(1964 kB)
(1853 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 16 bits
- 1- or 4-bit ECC
- block organization, total 4096 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 35 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance: 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 10 µA
- operating temperature range: industrial (I), industrial plus (J)
|
4 Gbit (256Mx16) |
40 MHz |
25 |
1.7 – 1.95 |
-40 – +85 (I) -40 – +105 (J) |
VFBGA-63 9x11 mm |
- |
P |
W29N08GV
(1971 kB)
(1312 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 8 bits
- 1- or 4-bit ECC
- block organization, total 8192 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- random read cycle: 25 ns
- sequential read cycle: 25 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 20 µA
- operating temperature range: industrial (I), automotive (B, A)
- compliance with AEC-Q100 automotive specification
|
8 Gbit (1024Mx8) |
40 MHz |
25 |
2.7 – 3.6 |
-40 – +85 (I)
Automotive: -40 – +85 (B) -40 – +105 (A) -40 – +115 |
TSOP-48 VFBGA-63 9x11 mm |
P |
P |
W29N08GZ
(1811 kB)
(1811 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 8 bits
- 1- or 4-bit ECC
- block organization, total 8192 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 35 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance: 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current typ. 20 µA
- operating temperature range: industrial (I), automotive (B, A)
- compliance with AEC-Q100 automotive specification
|
8 Gbit (1024Mx8) |
40 MHz |
25 |
1.7 – 1.95 |
-40 – +85 (I)
Automotive: -40 – +85 (B) -40 – +105 (A) |
TSOP-48 VFBGA-63 9x11 mm |
UD |
P |
W29N08GW
(1811 kB)
(1811 kB)
|
- Single-Level Cell (SLC) technology
- bus width - 16 bits
- 1- or 4-bit ECC
- block organization, total 8192 erasable blocks
- block size: 64 pages
- page size: 2048 B + 64 B
- sequential read cycle: 35 ns
- page program time: 250 µs
- block erase time: 2 ms
- standard ONFI NAND command set
- write protection
- block lock feature
- data protection in OTP area
- endurance: 100,000 erase/program cycles
- data retention: more than 10 years
- low power consumption, standby current: 20 µA
- operating temperature range: industrial (I), industrial plus (J)
|
8 Gbit (512Mx16) |
40 MHz |
25 |
1.7 – 1.95 |
-40 – +85 (I) -40 – +105 (J) |
VFBGA-63 9x11 mm |
- |
P |