Listing of Winbond's products Description of packages Winbond Electronics Corporation was founded in 1987 in Hsinchu Science Park, Taiwan. Until now the Company was one of the bigest manufacturer of LSI integrated circuits (microcontrolles, memories, telecommunications ICs, computer logic ICs and sound ICs) in the world. In July 2008 was created the new company, Nuvoton Technology Corporation , as a wholly-owned subsidiary of Winbond which took over the whole Winbond's products lines of Computer Logic and Consumer Logic ICs. Today Winbond focuses only on the Memory Products design and manufacturing with four main products groups: Mobile RAM, DRAM, Graphics DRAM and Flash Memory ICs. Winbond is IECQ, ISO 9001, ISO 14001 and QS 9000 certified. It has set up subsidiaries in the USA, Japan, and Hong Kong. The Marthel Company has in its offer full range of Winbond's memory products. Mobile RAM Pseudo SRAM (PSRAM) - a kind of memories which consist of a DRAM macro core with a traditional asynchronous SRAM interface. It is a line of 1.8 or 3.3 V products which offer 16...256 Mbit densities, can work with up to 133 MHz clock frequencies and feature fast access time and low power consumption. Comparing to traditional CMOS SRAMs they have a higher density, higher speed, smaller die size and DRAM compatible process. Low Power SDR SDRAM (LPSDR) - a kind of SDRAMs designed with specific features to reduce power consumption. It is a line of 1.8 V products with 512 Mbit density which can work with 133 MHz clock frequency. Low Power DDR SDRAM (LPDDR) - a kind of DDR SDRAMs designed with specific features to reduce power consumption. It is a line of 1.8 V products which offer 256 and 512 Mbit densities and can work with 133...200 MHz clock frequencies. DRAM SDRAM - hi-speed synchronous DRAMs designed to process data at the same clock speed as the CPU. It is a line of 3.3 V products which offer 16...256 Mbit densities and can work with 133...200 MHz clock frequencies. DDR SDRAM - high-speed Double-Data-Rate Synchronous DRAMs which achieve great data speed by transferring data on both the rising and falling edges of the clock signal. It is a line of 2.5 V products which offer 64...256 Mbit densities They can work with 166...250 MHz clock frequencies and are compliant to DDR-333, DDR-400 and DDR-500 specifications. DDR2 SDRAM - high-speed Double-Data-Rate Synchronous DRAMs generation 2 which achieve greater data speed than DDR SDRAMs by higher clock rate. It is a line of 1.8 V products which offer 128 Mbit...2 Gbit densities and are compliant to DDR2-667, DDR2-800 and DDR2-1066 specifications. Graphics DRAM - high-speed DRAM memories family including DDR2, DDR3, GDDR3 and GDDR5 products, designed for a wide range of graphics applications like VGA graphics cards, notebook PCs and game consoles. It is a line of 1.5 or 1.8 V products which offer 1 Gbit density and can achive the transfer rate up to 5 Gbps. Flash Parallel Flash memories - high speed non-volatile memories with parallel address and data buses, up to 100 K program/erase cycles, low power consumption and 20-year data retention. It is a line of 3.3 V products which offer 32...256 Mbit densities. Serial Flash memories - high speed non-volatile memories which use Serial Peripheral Interface (SPI) with dual output (X series) or dual/quad output (Q series). They run with the clock frequency up to 104 MHz and achieve maximum transfer rate of 208 Mbps in case of X series and 416 Mbps in case of Q series. It is a line of 3.3 V products which offer 1...128 Mbit densities and feature limited space, pins and power consumption, up to 100 K program/erase cycles and 20-year data retention.