Pseudo SRAM
Pseudo SRAMs (PSRAMs) are memories consisting of a DRAM macro core with a traditional asynchronous SRAM interface. They feature fast access time and low power consumption. Comparing to traditional CMOS SRAM have a higher density, higher speed, smaller die size and DRAM compatible process.
* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.
Chip |
Description |
Density (organization)
|
Clock frequency
|
Access time [ns]
|
Supply voltage [V]
|
Operating temperature [°C]
|
Package
|
Status *
|
Automotive |
Commercial & Industrial |
W956D6KBK
(1710 KB)
CellularRAM-ADM:- Address/ Data Multiplexed
- supports asynchronous and burst operations
- 4/8/16/32-word or continuous burst Read/Write mode
- deep power-down mode
- operating temperature range: industrial (I)
- low power consumption
|
64 Mbit (4Mx16) |
133 MHz |
70 |
1.8/1.8 (VDD/VDDQ) |
-40 – +85 (I) |
WFBGA-49 (4x4 mm) |
- |
P | |
W958D6DBC
(1159 KB)
CellularRAM-ADM:- Address/ Data Multiplexed
- supports asynchronous and burst operations
- 4/8/16/32-word or continuous burst Read/Write mode
- deep power-down mode
- operating temperature range: industrial (I)
- low power consumption
|
256 Mbit (16Mx16) |
133 MHz |
70 |
1.8/1.8 (VDD/VDDQ) |
-40 – +85 (I) |
VFBGA-54 (6x8 mm) |
- |
N | |
W968D6DAG
(1678 KB)
CellularRAM:- supports asynchronous, page and burst operations
- 4/8/16/32-word or continuous burst Read/Write mode
- deep power-down mode
- operating temperature range: industrial (I)
- low power consumption
|
256 Mbit (16Mx16) |
133 MHz |
70 |
1.8/1.8 (VDD/VDDQ) |
-40 – +85 (I) |
VFBGA-54 (6x8 mm) |
- |
N | |
HyperRAM
An improved version of the Pseudo SRAM memories, consisting of a DRAM macro core with a traditional asynchronous SRAM interface, characterized by higher speed and smaller form factor size.
* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.
Chip |
Description |
Density (organization)
|
Clock frequency
|
Access time [ns]
|
Supply voltage [V]
|
Operating temperature [°C]
|
Package
|
Status *
|
Automotive |
Commercial & Industrial |
W955K8MBY
(731 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 8-bit data bus
- high speed read and write operations
- differential clock
- hardware Reset
- Read-Write Data Strobe (RWDS)
- burst operations - burst lengths 16/32/64/128 bytes
- hybrid sleep and deep power-down modes
- full and partial array refresh modes
- small package
- operating temperature ranges: industrial (I), automotive
|
32 Mbit (4Mx8) |
200 MHz |
35 |
1.8 (VCC, VCCQ) |
-40 – +85 (I)
Automotive |
TFBGA-24 (6x8 mm) |
P |
P | |
W955N8MBY
(730 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 8-bit data bus
- high speed read and write operations
- differential clock
- hardware Reset
- Read-Write Data Strobe (RWDS)
- burst operations - burst lengths 16/32/64/128 bytes
- hybrid sleep and deep power-down modes
- full and partial array refresh modes
- small package
- operating temperature ranges: industrial (I), automotive
|
32 Mbit (4Mx8) |
200 MHz |
35 |
3.0 (VCC, VCCQ) |
-40 – +85 (I)
Automotive |
TFBGA-24 (6x8 mm) |
N |
N | |
W956D8MWS
(733 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 8-bit data bus
- high speed read and write operations
- differential clock
- hardware Reset
- Read-Write Data Strobe (RWDS)
- burst operations - burst lengths 16/32/64/128 bytes
- hybrid sleep and deep power-down modes
- full and partial array refresh modes
- small package
- operating temperature ranges: industrial (I)
|
64 Mbit (8Mx8) |
200 MHz |
35 |
1.8 (VCC, VCCQ) |
-40 – +85 (I) |
TFBGA-24 (6x8 mm) |
- |
P | |
W956D8MBY
(776 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 8-bit data bus
- high speed read and write operations
- differential clock
- hardware Reset
- Read-Write Data Strobe (RWDS)
- burst operations - burst lengths 16/32/64/128 bytes
- hybrid sleep and deep power-down modes
- full and partial array refresh modes
- small package
- operating temperature ranges: industrial (I), automotive
|
64 Mbit (8Mx8) |
200 MHz |
35 |
1.8 (VCC, VCCQ) |
-40 – +85 (I)
Automotive |
TFBGA-24 (6x8 mm) |
P |
P | |
W956A8MBY
(776 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 8-bit data bus
- high speed read and write operations
- differential clock
- hardware Reset
- Read-Write Data Strobe (RWDS)
- burst operations - burst lengths 16/32/64/128 bytes
- hybrid sleep and deep power-down modes
- full and partial array refresh modes
- small package
- operating temperature ranges: industrial (I), automotive
|
64 Mbit (8Mx8) |
200 MHz |
35 |
3.0 (VCC, VCCQ) |
-40 – +85 (I)
Automotive |
TFBGA-24 (6x8 mm) |
N |
N | |
W957D8MFY
(662 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 8-bit data bus
- operating temperature ranges: industrial (I), automotive
|
128 Mbit (16Mx8) |
200 MHz | |
1.8 (VCC, VCCQ) |
-40 – +85 (I)
Automotive |
BGA-24 |
P |
P | |
W957D8NWS
(810 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 8-bit data bus
- operating temperature ranges: industrial (I)
|
128 Mbit (16Mx8) |
200 / 250 MHz | |
1.8 – 1.35 (VCC, VCCQ) |
-40 – +85 (I) |
WLCSP |
- |
P | |
W957D6NBG |
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 16-bit data bus
- operating temperature ranges: industrial (I)
|
128 Mbit (8Mx16) |
200 / 250 MHz | |
1.8 – 1.35 (VCC, VCCQ) |
-40 – +85 (I) |
BGA-49 |
- |
P |
W958D8NBY
(769 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 8-bit data bus
- high speed read and write operations
- differential clock
- hardware Reset
- Read-Write Data Strobe (RWDS)
- burst operations - burst lengths 16/32/64/128 bytes
- hybrid sleep and deep power-down modes
- full and partial array refresh modes
- small package
- operating temperature ranges: industrial (I), automotive
|
256 Mbit (32Mx8) |
200 / 250 MHz |
28 |
1.8 (VCC, VCCQ) |
-40 – +85 (I)
Automotive |
TFBGA-24 (6x8 mm) |
P |
P | |
W958D8NWS
(765 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 8-bit data bus
- high speed read and write operations
- differential clock
- hardware Reset
- Read-Write Data Strobe (RWDS)
- burst operations - burst lengths 16/32/64/128 bytes
- hybrid sleep and deep power-down modes
- full and partial array refresh modes
- small package
- operating temperature ranges: industrial (I)
|
256 Mbit (32Mx8) |
200 MHz |
35 |
1.8 (VCC, VCCQ) |
-40 – +85 (I) |
WLCSP-30 |
- |
P | |
W958D6NWS
(826 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 16-bit data bus
- high speed read and write operations
- differential clock
- hardware Reset
- Read-Write Data Strobe (RWDS)
- burst operations - burst lengths 16/32/64/128 bytes
- hybrid sleep and deep power-down modes
- full and partial array refresh modes
- small package
- operating temperature ranges: industrial (I)
|
256 Mbit (16Mx16) |
200 MHz |
35 |
1.8 (VCC, VCCQ) |
-40 – +85 (I) |
WLCSP-30 |
- |
P | |
W958D6NBK
(829 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 16-bit data bus
- high speed read and write operations
- differential clock
- hardware Reset
- Read-Write Data Strobe (RWDS)
- burst operations - burst lengths 16/32/64/128 bytes
- hybrid sleep and deep power-down modes
- full and partial array refresh modes
- small package
- operating temperature ranges: industrial (I)
|
256 Mbit (16Mx16) |
200 / 250 MHz |
28 |
1.8 (VCC, VCCQ) |
-40 – +85 (I) |
WFBGA-49 |
- |
P | |
W959D8NFY
(733 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 8-bit data bus
- high speed read and write operations
- differential clock
- hardware Reset
- Read-Write Data Strobe (RWDS)
- burst operations - burst lengths 16/32/64/128 bytes
- hybrid sleep and deep power-down modes
- full and partial array refresh modes
- small package
- operating temperature ranges: industrial (I), automotive
|
512 Mbit (64Mx8) |
200 / 250 MHz |
28 |
1.8 (VCC, VCCQ) |
-40 – +85 (I)
Automotive |
TFBGA-24 (6x8 mm) DDP (Dual-Die-Package) |
P |
P | |
W959D6NFK
(773 KB)
- HyperBus interface - low signal count, Double Data Rate (DDR)
- 16-bit data bus
- high speed read and write operations
- differential clock
- hardware Reset
- Read-Write Data Strobe (RWDS)
- burst operations - burst lengths 16/32/64/128 bytes
- hybrid sleep and deep power-down modes
- full and partial array refresh modes
- small package
- operating temperature ranges: industrial (I)
|
512 Mbit (32Mx16) |
200 / 250 MHz |
28 |
1.8 (VCC, VCCQ) |
-40 – +85 (I) |
WFBGA-49 DDP (Dual-Die-Package) |
- |
P | |
Low Power SDR SDRAM
Low Power SDR SDRAMs (Low Power Single Data Rate SDRAMs) are memories with 1.8/1.8 V power supply, designed with specific features to reduce power consumption. All ICs are RoHS compliant.
* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.
Chip |
Description |
Density (organization)
|
Clock frequency
|
Supply voltage [V]
|
Operating temperature [°C]
|
Package
|
Status *
|
Automotive |
Commercial & Industrial |
W987D6HBG
(1834 KB) - synchronous burst mode interface
- speed grades: -6, -75
- CAS Latency: 2, 3
- burst length: 1, 2, 4, 8 and full page
- 4 banks
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended ?, industrial (I)
- low power consumption
|
128 Mbit (8Mx16) |
133 MHz (-75) 166 MHz (-6) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-54 (8x9 mm) |
- |
N | |
W987D2HBJ
(1834 KB)
128 Mbit (4Mx32) |
133 MHz (-75) 166 MHz (-6) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-90 (8x13 mm) |
- |
N | |
W988D6FBG
(1036 KB) - synchronous burst mode interface
- speed grades: -6, -75
- CAS Latency: 2, 3
- burst length: 1, 2, 4, 8 and full page
- 4 banks
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended ?, industrial (I)
- low power consumption
|
256 Mbit (16Mx16) |
133 MHz (-75) 166 MHz (-6) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-54 (8x9 mm) |
- |
N | |
W988D2FBJ
(1036 KB)
256 Mbit (8Mx32) |
133 MHz (-75) 166 MHz (-6) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-90 (8x13 mm) |
- |
N | |
W989D6KBG
(1463 KB) - synchronous burst mode interface
- speed grade: -6, -75
- CAS Latency: 2, 3
- burst length: 1, 2, 4, 8 and full page
- 4 banks
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I)
- low power consumption
|
512 Mbit (32Mx16) |
133 MHz (-75) 166 MHz (-6) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-54 (8x9 mm) |
- |
N | |
W989D2KBJ
(1463 KB)
512 Mbit (16Mx32) |
133 MHz (-75) 166 MHz (-6) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-90 (8x13 mm) |
- |
N | |
W989D6DBG
(1192 KB) - synchronous burst mode interface
- speed grade: -6, -75
- CAS Latency: 2, 3
- burst length: 1, 2, 4, 8 and full page
- 4 banks
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I)
- low power consumption
|
512 Mbit (32Mx16) |
133 MHz (-75) 166 MHz (-6) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-54 (8x9 mm) |
- |
P | |
W989D2DBJ
(1192 KB)
512 Mbit (16Mx32) |
133 MHz (-75) 166 MHz (-6) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-90 (8x13 mm) |
- |
P | |
Low Power DDR SDRAM
Low Power DDR SDRAMs (Low Power Double Data Rate SDRAMs) are memories with 1.8/1.8 V power supply, designed with specific features to reduce power consumption. All ICs are RoHS compliant.
* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.
Chip |
Description |
Density (organization)
|
Clock frequency
|
Supply voltage [V]
|
Operating temperature [°C]
|
Package
|
Status *
|
Automotive |
Commercial & Industrial |
W947D6HBH
(1161 KB) - synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E, G), industrial (I)
- low power consumption
|
128 Mbit (8Mx16) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
Standard IDD6: -25 – +85 (G)
Low IDD6: -25 – +85 (E) -40 – +85 (I) |
VFBGA-60 (8x9 mm) |
- |
N | |
W947D2HBJ
(1161 KB)
128 Mbit (4Mx32) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
Standard IDD6: -25 – +85 (G)
Low IDD6: -25 – +85 (E) -40 – +85 (I) |
VFBGA-90 (8x13 mm) |
- |
N | |
W948D6FBH
(963 KB)
- synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E, G), industrial (I)
- low power consumption
|
256 Mbit (16Mx16) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
Standard IDD6: -25 – +85 (G)
Low IDD6: -25 – +85 (E) -40 – +85 (I) |
VFBGA-60 (8x9 mm) |
- |
N | |
W948D2FBJ
(963 KB)
- synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E, G), industrial (I)
- low power consumption
|
256 Mbit (8Mx32) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
Standard IDD6: -25 – +85 (G)
Low IDD6: -25 – +85 (E) -40 – +85 (I) |
VFBGA-90 (8x13 mm) |
- |
N | |
W948D6KBH
(1057 KB)
- synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E, G), industrial (I)
- low power consumption
|
256 Mbit (16Mx16) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
Standard IDD6: -25 – +85 (G)
Low IDD6: -25 – +85 (E) -40 – +85 (I) |
VFBGA-60 (8x9 mm) |
- |
P | |
W948V6KBH
(1089 KB)
- synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Deep Self-Refresh (DSR) mode which can save 70% power compared with normal one
- Power-down and Deep Power-down modes
- operating temperature range: extended (E, G), industrial (I)
- low power consumption
|
256 Mbit (16Mx16) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
Standard IDD6: -25 – +85 (G)
Low IDD6: -25 – +85 (E) -40 – +85 (I) |
VFBGA-60 (8x9 mm) |
- |
N | |
W949D6KBH
(936 KB) - synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I)
- low power consumption
|
512 Mbit (32Mx16) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-60 (8x9 mm) |
- |
N | |
W949D2KBJ
(936 KB)
512 Mbit (16Mx32) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-90 (8x13 mm) |
- |
N | |
W949D6DBH
(1071 KB) - synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I), automotive
- compliance with AEC-Q100 automotive specification
- low power consumption
|
512 Mbit (32Mx16) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-60 (8x9 mm) |
N |
P | |
W949D2DBJ
(1071 KB)
512 Mbit (16Mx32) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-90 (8x13 mm) |
N |
P | |
W94AD6KBH
(1142 KB) - synchronous burst mode interface
- speed grades: -5, -6
- CAS Latency: 2, 3
- burst length: 2, 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I), automotive
- compliance with AEC-Q100 automotive specification
- low power consumption
|
1 Gbit (64Mx16) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-60 (8x9 mm) |
N |
P | |
W94AD2KBJ
(1142 KB)
1 Gbit (32Mx32) |
166 MHz (-6) 200 MHz (-5) |
1.8/1.8 (VDD/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
VFBGA-90 (8x13 mm) |
N |
P | |
Low Power DDR2 SDRAM
Low Power DDR2 SDRAMs (Low Power Double Data Rate SDRAMs 2nd generation) are memories with 1.8/1.2 V power supply, designed with specific features to reduce power consumption. All ICs are RoHS compliant.
* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.
Chip |
Description |
Density (organization)
|
Clock frequency
|
Supply voltage [V]
|
Operating temperature [°C]
|
Package
|
Status *
|
Automotive |
Commercial & Industrial |
W978H6KBV
(1876 KB) - synchronous burst mode interface
- burst length: 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I), automotive
- compliance with AEC-Q100 automotive specification
- low power consumption
|
256 Mbit (16Mx16) |
400 MHz 533 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-134 (10x11.5 mm) |
N |
N | |
W978H2KBV
(1876 KB)
256 Mbit (8Mx32) |
400 MHz 533 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-134 (10x11.5 mm) |
N |
N | |
W979H6KBV
(1877 KB) - synchronous burst mode interface
- burst length: 4, 8, 16
- 4 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I), automotive
- compliance with AEC-Q100 automotive specification
- low power consumption
|
512 Mbit (32Mx16) |
400 MHz 533 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-134 (10x11.5 mm) |
P |
N | |
W979H2KBV
(1877 KB)
512 Mbit (16Mx32) |
400 MHz 533 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-134 (10x11.5 mm) |
P |
N | |
W97AH6KBV
(1916 KB) - synchronous burst mode interface
- burst length: 4, 8, 16
- 8 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I), automotive
- compliance with AEC-Q100 automotive specification
- low power consumption
|
1 Gbit (64Mx16) |
400 MHz 533 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-134 (10x11.5 mm) |
N |
N | |
W97AH2KBV
(1916 KB)
1 Gbit (32Mx32) |
400 MHz 533 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-134 (10x11.5 mm) |
N |
N | |
W97AH6NBV
(1913 KB)
1 Gbit (64Mx16) |
400 MHz 533 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-134 (10x11.5 mm) |
P |
P | |
W97AH2NBV
(1913 KB)
1 Gbit (32Mx32) |
400 MHz 533 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-134 (10x11.5 mm) |
P |
P | |
W97BH6MBV
(1914 KB) - synchronous burst mode interface
- burst length: 4, 8, 16
- 8 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I), automotive
- compliance with AEC-Q100 automotive specification
- low power consumption
|
2 Gbit (128Mx16) |
400 MHz 533 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-134 (10x11.5 mm) |
N |
P | |
W97BH2MBV
(1914 KB)
2 Gbit (64Mx32) |
400 MHz 533 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I)
Automotive |
VFBGA-134 (10x11.5 mm) |
N |
P | |
Low Power DDR3 SDRAM
Low Power DDR3 SDRAMs (Low Power Double Data Rate SDRAMs 3rd generation) are memories with 1.8/1.2 V power supply, designed with specific features to reduce power consumption. All ICs are RoHS compliant.
* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.
Chip |
Description |
Density (organization)
|
Clock frequency
|
Supply voltage [V]
|
Operating temperature [°C]
|
Package
|
Status *
|
Automotive |
Commercial & Industrial |
W63AH6NBV
(2085 KB) - synchronous burst mode interface
- 8 banks
- differential clock inputs
- data mask for write data
- Self Refresh mode
- Power-down and Deep Power-down modes
- operating temperature range: extended (E), industrial (I)
- low power consumption
|
1 Gbit (64Mx16) |
800 / 933 / 1066 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
BGA-178 |
- |
P | |
W63AH2NBV
(2085 KB)
1 Gbit (32Mx32) |
800 / 933 / 1066 MHz |
1.8 (VDD1)
1.2 (VDD2/VDDCA/VDDQ) |
-25 – +85 (E) -40 – +85 (I) |
BGA-178 |
- |
P | |
Low Power DDR4/4X SDRAM
Low Power DDR4/4X SDRAMs (Low Power Double Data Rate SDRAMs 4th generation) are memories with 1.8/1.1/1.1 V (DDR4) or 1.8/1.1/0.6 V (DDR4X) power supply, designed with specific features to reduce power consumption. All ICs are RoHS compliant.
* Status: P - mass production, S - samples, UD - under development, N - not recommended for new design.
Chip |
Description |
Density (organization)
|
Clock frequency
|
Supply voltage [V]
|
Operating temperature [°C]
|
Package
|
Status *
|
Automotive |
Commercial & Industrial |
W66AP6NBU
(3505 KB) - Single-Die-Package (SDP), single channel memory
- synchronous burst mode interface
- burst length: 16/32 bytes
- 8 banks
- differential clock inputs
- refresh modes: Auto Refresh (per bank), partial array Self Refresh
- Power-down mode
- operating temperature range: industrial plus (J)
|
1 Gbit (64Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 1.1 |
-40 – +105 (J) |
WFBGA-200 |
- |
P | |
W66AQ6NBU
(3435 KB)
1 Gbit (64Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 0.6 |
-40 – +105 (J) |
WFBGA-200 |
- |
P | |
W66AP6NBH
(3505 KB) - Single-Die-Package (SDP), single channel memory
- synchronous burst mode interface
- burst length: 16/32 bytes
- 8 banks
- differential clock inputs
- refresh modes: Auto Refresh (per bank), partial array Self Refresh
- Power-down mode
- operating temperature range: industrial plus (J)
|
1 Gbit (64Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 1.1 |
-40 – +105 (J) |
VFBGA-100 |
- |
P | |
W66AQ6NBH
(3435 KB)
1 Gbit (64Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 0.6 |
-40 – +105 (J) |
VFBGA-100 |
- |
P | |
W66AP6NBQ
(3505 KB) - Single-Die-Package (SDP), single channel memory
- synchronous burst mode interface
- burst length: 16/32 bytes
- 8 banks
- differential clock inputs
- refresh modes: Auto Refresh (per bank), partial array Self Refresh
- Power-down mode
- operating temperature range: industrial plus (J)
|
1 Gbit (64Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 1.1 |
-40 – +105 (J) |
TFBGA-200 |
- |
P | |
W66AQ6NBQ
(3435 KB)
1 Gbit (64Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 0.6 |
-40 – +105 (J) |
TFBGA-200 |
- |
P | |
W66BP6NBU
(3314 KB) - Single-Die-Package (SDP), single channel memory
- synchronous burst mode interface
- burst length: 16/32 bytes
- 8 banks
- differential clock inputs
- refresh modes: Auto Refresh (per bank), partial array Self Refresh
- Power-down mode
- operating temperature range: industrial plus (J), automotive
|
2 Gbit (128Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 1.1 |
-40 – +105 (I)
Automotive |
WFBGA-200 |
P |
P | |
W66BQ6NBU
(3284 KB)
2 Gbit (128Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 0.6 |
-40 – +105 (I)
Automotive |
WFBGA-200 |
P |
P | |
W66BP6NBH
(3314 KB) - Single-Die-Package (SDP), single channel memory
- synchronous burst mode interface
- burst length: 16/32 bytes
- 8 banks
- differential clock inputs
- refresh modes: Auto Refresh (per bank), partial array Self Refresh
- Power-down mode
- operating temperature range: industrial plus (J)
|
2 Gbit (128Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 1.1 |
-40 – +105 (I) |
VFBGA-100 |
- |
P | |
W66BQ6NBH
(3284 KB)
2 Gbit (128Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 0.6 |
-40 – +105 (I) |
VFBGA-100 |
- |
P | |
W66BP6NBQ
(3314 KB) - Single-Die-Package (SDP), single channel memory
- synchronous burst mode interface
- burst length: 16/32 bytes
- 8 banks
- differential clock inputs
- refresh modes: Auto Refresh (per bank), partial array Self Refresh
- Power-down mode
- operating temperature range: industrial plus (J)
|
2 Gbit (128Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 1.1 |
-40 – +105 (I) |
TFBGA-200 |
- |
P | |
W66BQ6NBQ
(3284 KB)
2 Gbit (128Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 0.6 |
-40 – +105 (I) |
TFBGA-200 |
- |
P | |
W66BQ2NQU
(3435 KB) - Dual-Die-Package (DDP), dual channel memory
- synchronous burst mode interface
- burst length: 16/32 bytes
- 8 banks
- differential clock inputs
- refresh modes: Auto Refresh (per bank), partial array Self Refresh
- Power-down mode
- operating temperature range: industrial (I), industrial plus (J)
|
2 Gbit (64Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 0.6 |
-40 – +95 (I) -40 – +105 (I) |
WFBGA-200 |
- |
P | |
W66BP2NQU
(3505 KB)
2 Gbit (64Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 1.1 |
-40 – +105 (I) |
WFBGA-200 |
- |
P | |
W66BQ2NQQ
(3435 KB) - Dual-Die-Package (DDP), dual channel memory
- synchronous burst mode interface
- burst length: 16/32 bytes
- 8 banks
- differential clock inputs
- refresh modes: Auto Refresh (per bank), partial array Self Refresh
- Power-down mode
- operating temperature range: industrial (I), industrial plus (J)
|
2 Gbit (64Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 0.6 |
-40 – +95 (I) -40 – +105 (I) |
TFBGA-200 |
- |
P | |
W66BP2NQQ
(3505 KB)
2 Gbit (64Mx16x1 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 1.1 |
-40 – +105 (I) |
TFBGA-200 |
- |
P | |
W66CQ2NQU
(3284 KB) - Dual-Die-Package (DDP), dual channel memory
- synchronous burst mode interface
- burst length: 16/32 bytes
- 8 banks
- refresh modes: Auto Refresh (per bank), partial array Self Refresh
- Power-down mode
- operating temperature range: industrial plus (J), automotive
|
4 Gbit (128Mx16x2 channels) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 0.6 |
-40 – +105 (J)
Automotive |
WFBGA-200 |
P |
P | |
W66CP2NQU
(3314 KB)
4 Gbit (128Mx16x2 channels) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 1.1 |
-40 – +105 (J)
Automotive |
WFBGA-200 |
P |
P | |
W66CQ2NQQ
(3314 KB) - Dual-Die-Package (DDP), dual channel memory
- synchronous burst mode interface
- burst length: 16/32 bytes
- 8 banks
- differential clock inputs
- refresh modes: Auto Refresh (per bank), partial array Self Refresh
- Power-down mode
- operating temperature range: industrial (I), industrial plus (J)
|
4 Gbit (128Mx16x2 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 0.6 |
-40 – +95 (I) -40 – +105 (I) |
TFBGA-200 |
- |
P | |
W66CP2NQQ
(3314 KB)
4 Gbit (128Mx16x2 channel) |
1600 / 1866 / 2133 MHz |
1.8 / 1.1 / 1.1 |
-40 – +105 (I) |
TFBGA-200 |
- |
P | |
|